Vishay SISH Type P-Channel MOSFET, 54 A, 30 V Enhancement, 8-Pin 1212-8 SISH103DN-T1-GE3
- RS stock no.:
- 279-9981
- Mfr. Part No.:
- SISH103DN-T1-GE3
- Manufacturer:
- Vishay
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Bulk discount available
View bulk pricing optionsSubtotal (10 units, in packs of 10)*
R 160,31
(exc. VAT)
R 184,36
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 5,950 unit(s) shipping from 07 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 16.031 | R 160.31 |
| 50 - 90 | R 15.63 | R 156.30 |
| 100 - 240 | R 15.161 | R 151.61 |
| 250 - 990 | R 14.555 | R 145.55 |
| 1000 + | R 13.973 | R 139.73 |
*price indicative
- RS stock no.:
- 279-9981
- Mfr. Part No.:
- SISH103DN-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 54A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | 1212-8 | |
| Series | SISH | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0089Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 72nC | |
| Maximum Power Dissipation Pd | 41.6W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 3.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 54A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type 1212-8 | ||
Series SISH | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0089Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 72nC | ||
Maximum Power Dissipation Pd 41.6W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 3.3mm | ||
Automotive Standard No | ||
The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
100 percent Rg and UIS tested
Fully lead (Pb)-free device
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