Vishay SISH Type P-Channel MOSFET, 54 A, 30 V Enhancement, 8-Pin 1212-8 SISH103DN-T1-GE3

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Subtotal (1 pack of 10 units)*

R 153,59

(exc. VAT)

R 176,63

(inc. VAT)

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  • 5,950 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
10 - 40R 15.359R 153.59
50 - 90R 14.975R 149.75
100 - 240R 14.526R 145.26
250 - 990R 13.945R 139.45
1000 +R 13.387R 133.87

*price indicative

Packaging Options:
RS stock no.:
279-9981
Mfr. Part No.:
SISH103DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

54A

Maximum Drain Source Voltage Vds

30V

Series

SISH

Package Type

1212-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0089Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

72nC

Maximum Power Dissipation Pd

41.6W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

3.3mm

Automotive Standard

No

The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

100 percent Rg and UIS tested

Fully lead (Pb)-free device

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