Vishay SISH Type P-Channel MOSFET, 54 A, 30 V Enhancement, 8-Pin 1212-8 SISH103DN-T1-GE3

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Subtotal (1 pack of 10 units)*

R 158,47

(exc. VAT)

R 182,24

(inc. VAT)

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  • 5,990 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
10 - 40R 15.847R 158.47
50 - 90R 15.451R 154.51
100 - 240R 14.987R 149.87
250 - 990R 14.388R 143.88
1000 +R 13.812R 138.12

*price indicative

Packaging Options:
RS stock no.:
279-9981
Mfr. Part No.:
SISH103DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

54A

Maximum Drain Source Voltage Vds

30V

Package Type

1212-8

Series

SISH

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0089Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

72nC

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

41.6W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

3.3mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

100 percent Rg and UIS tested

Fully lead (Pb)-free device

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