Vishay SISH Type P-Channel MOSFET, 54 A, 30 V Enhancement, 8-Pin 1212-8 SISH103DN-T1-GE3

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Subtotal (1 pack of 10 units)*

R 165,66

(exc. VAT)

R 190,51

(inc. VAT)

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  • 5,950 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
10 - 40R 16.566R 165.66
50 - 90R 16.152R 161.52
100 - 240R 15.667R 156.67
250 - 990R 15.04R 150.40
1000 +R 14.438R 144.38

*price indicative

Packaging Options:
RS stock no.:
279-9981
Mfr. Part No.:
SISH103DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

54A

Maximum Drain Source Voltage Vds

30V

Package Type

1212-8

Series

SISH

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0089Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

41.6W

Typical Gate Charge Qg @ Vgs

72nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

3.3mm

Automotive Standard

No

The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

100 percent Rg and UIS tested

Fully lead (Pb)-free device

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