Vishay SISD Type N-Channel MOSFET, 198 A, 30 V Enhancement, 8-Pin 1212-F SISD5300DN-T1-GE3

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Subtotal (1 pack of 4 units)*

R 175,592

(exc. VAT)

R 201,932

(inc. VAT)

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Units
Per unit
Per Pack*
4 - 56R 43.898R 175.59
60 - 96R 42.80R 171.20
100 - 236R 41.515R 166.06
240 - 996R 39.855R 159.42
1000 +R 38.26R 153.04

*price indicative

Packaging Options:
RS stock no.:
279-9979
Mfr. Part No.:
SISD5300DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

198A

Maximum Drain Source Voltage Vds

30V

Series

SISD

Package Type

1212-F

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00087Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

57W

Typical Gate Charge Qg @ Vgs

36.2nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

3.3mm

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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