Vishay SISD Type N-Channel MOSFET, 198 A, 30 V Enhancement, 8-Pin 1212-F SISD5300DN-T1-GE3
- RS stock no.:
- 279-9979
- Mfr. Part No.:
- SISD5300DN-T1-GE3
- Manufacturer:
- Vishay
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Bulk discount available
View bulk pricing optionSubtotal (1 pack of 4 units)*
R 163,712
(exc. VAT)
R 188,268
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 6,000 unit(s) shipping from 03 June 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 4 - 56 | R 40.928 | R 163.71 |
| 60 - 96 | R 39.905 | R 159.62 |
| 100 - 236 | R 38.708 | R 154.83 |
| 240 - 996 | R 37.16 | R 148.64 |
| 1000 + | R 35.673 | R 142.69 |
*price indicative
- RS stock no.:
- 279-9979
- Mfr. Part No.:
- SISD5300DN-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 198A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SISD | |
| Package Type | 1212-F | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00087Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 36.2nC | |
| Maximum Power Dissipation Pd | 57W | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 198A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SISD | ||
Package Type 1212-F | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00087Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 36.2nC | ||
Maximum Power Dissipation Pd 57W | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested
Related links
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