Vishay SIRS Type N-Channel MOSFET, 265 A, 80 V Enhancement, 8-Pin SO-8 SIRS5800DP-T1-GE3

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Subtotal (1 pack of 2 units)*

R 160,90

(exc. VAT)

R 185,04

(inc. VAT)

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In Stock
  • 6,000 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
2 - 48R 80.45R 160.90
50 - 98R 78.44R 156.88
100 - 248R 76.085R 152.17
250 - 998R 73.04R 146.08
1000 +R 70.12R 140.24

*price indicative

Packaging Options:
RS stock no.:
279-9973
Mfr. Part No.:
SIRS5800DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

265A

Maximum Drain Source Voltage Vds

80V

Package Type

SO-8

Series

SIRS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0018Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

122nC

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

240W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

5mm

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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