Vishay SIRS Type N-Channel MOSFET, 478 A, 30 V Enhancement, 8-Pin SO-8 SIRS4302DP-T1-GE3

Image representative of range

View all MOSFETs

Subtotal (1 reel of 3000 units)*

R 72 702,00

(exc. VAT)

R 83 607,00

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 3,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
3000 +R 24.234R 72,702.00

*price indicative

RS stock no.:
279-9962
Mfr. Part No.:
SIRS4302DP-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

478A

Maximum Drain Source Voltage Vds

30V

Package Type

SO-8

Series

SIRS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00057Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

230nC

Maximum Power Dissipation Pd

208W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Length

5mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

Related links