Infineon BSO080P03S H OptiMOSTM-P Type P-Channel MOSFET, -14.9 A, -30 V Enhancement, 8-Pin PG-DSO-8
- RS stock no.:
- 273-5242
- Mfr. Part No.:
- BSO080P03SHXUMA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 142,89
(exc. VAT)
R 164,325
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 90 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 28.578 | R 142.89 |
| 50 - 95 | R 27.864 | R 139.32 |
| 100 - 245 | R 27.028 | R 135.14 |
| 250 - 995 | R 25.946 | R 129.73 |
| 1000 + | R 24.908 | R 124.54 |
*price indicative
- RS stock no.:
- 273-5242
- Mfr. Part No.:
- BSO080P03SHXUMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -14.9A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Package Type | PG-DSO-8 | |
| Series | BSO080P03S H OptiMOSTM-P | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Forward Voltage Vf | -0.82V | |
| Typical Gate Charge Qg @ Vgs | -102nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 40 mm | |
| Height | 1.5mm | |
| Length | 40mm | |
| Standards/Approvals | IEC61249-2-21, JEDEC, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -14.9A | ||
Maximum Drain Source Voltage Vds -30V | ||
Package Type PG-DSO-8 | ||
Series BSO080P03S H OptiMOSTM-P | ||
Mount Type Surface | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Forward Voltage Vf -0.82V | ||
Typical Gate Charge Qg @ Vgs -102nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 40 mm | ||
Height 1.5mm | ||
Length 40mm | ||
Standards/Approvals IEC61249-2-21, JEDEC, RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET is a P channel power MOSFET. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on state resistance and figure of merit characteristics. It has 150 degree Celsius operating temperature and qualified according JEDEC for target applications.
Logic level
Halogen free
RoHS compliant
Pb free lead plating
Enhancement mode
Related links
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