Infineon BSO080P03S H OptiMOSTM-P Type P-Channel MOSFET, -14.9 A, -30 V Enhancement, 8-Pin PG-DSO-8
- RS stock no.:
- 273-5242
- Mfr. Part No.:
- BSO080P03SHXUMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 145,07
(exc. VAT)
R 166,83
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 90 unit(s) shipping from 26 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 29.014 | R 145.07 |
| 50 - 95 | R 28.288 | R 141.44 |
| 100 - 245 | R 27.44 | R 137.20 |
| 250 - 995 | R 26.342 | R 131.71 |
| 1000 + | R 25.288 | R 126.44 |
*price indicative
- RS stock no.:
- 273-5242
- Mfr. Part No.:
- BSO080P03SHXUMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -14.9A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Series | BSO080P03S H OptiMOSTM-P | |
| Package Type | PG-DSO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -0.82V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Typical Gate Charge Qg @ Vgs | -102nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 40mm | |
| Width | 40 mm | |
| Standards/Approvals | IEC61249-2-21, JEDEC, RoHS | |
| Height | 1.5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -14.9A | ||
Maximum Drain Source Voltage Vds -30V | ||
Series BSO080P03S H OptiMOSTM-P | ||
Package Type PG-DSO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -0.82V | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Typical Gate Charge Qg @ Vgs -102nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 40mm | ||
Width 40 mm | ||
Standards/Approvals IEC61249-2-21, JEDEC, RoHS | ||
Height 1.5mm | ||
Automotive Standard No | ||
The Infineon MOSFET is a P channel power MOSFET. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on state resistance and figure of merit characteristics. It has 150 degree Celsius operating temperature and qualified according JEDEC for target applications.
Logic level
Halogen free
RoHS compliant
Pb free lead plating
Enhancement mode
Related links
- Infineon BSO080P03S H OptiMOSTM-P Type P-Channel MOSFET -30 V Enhancement, 8-Pin PG-DSO-8 BSO080P03SHXUMA1
- Infineon OptiMOS Type P-Channel MOSFET -30 V Enhancement, 8-Pin PG-DSO-8
- Infineon OptiMOS Type P-Channel MOSFET -30 V Enhancement, 8-Pin PG-DSO-8 BSO301SPHXUMA1
- Infineon ISA Type N 10.2 A 8-Pin PG-DSO-8 ISA150233C03LMDSXTMA
- Infineon ISA Type N 9.6 A 8-Pin PG-DSO-8 ISA170230C04LMDSXTMA1
- Infineon ISA Type N 7.9 A 8-Pin PG-DSO-8 ISA250300C04LMDSXTMA1
- Infineon OptiMOS P Type P-Channel MOSFET 20 V Enhancement, 8-Pin DSO BSO201SPHXUMA1
- Infineon OptiMOS P Type P-Channel MOSFET 20 V Enhancement, 8-Pin DSO