Infineon OptiMOS P Type P-Channel MOSFET, 14.9 A, 20 V Enhancement, 8-Pin DSO BSO201SPHXUMA1
- RS stock no.:
- 827-5356
- Mfr. Part No.:
- BSO201SPHXUMA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 10 units)*
R 133,91
(exc. VAT)
R 154,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 2,420 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 240 | R 13.391 | R 133.91 |
| 250 - 740 | R 13.056 | R 130.56 |
| 750 - 1190 | R 12.664 | R 126.64 |
| 1200 - 2490 | R 12.157 | R 121.57 |
| 2500 + | R 11.671 | R 116.71 |
*price indicative
- RS stock no.:
- 827-5356
- Mfr. Part No.:
- BSO201SPHXUMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 14.9A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | OptiMOS P | |
| Package Type | DSO | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 12.9mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 66nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Operating Temperature | 150°C | |
| Width | 4 mm | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Height | 1.65mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 14.9A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series OptiMOS P | ||
Package Type DSO | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 12.9mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 66nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Operating Temperature 150°C | ||
Width 4 mm | ||
Standards/Approvals No | ||
Length 5mm | ||
Height 1.65mm | ||
Automotive Standard No | ||
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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