Infineon ISA Type N, Type P-Channel MOSFET, 7.9 A, 40 V Enhancement, 8-Pin PG-DSO-8 ISA250300C04LMDSXTMA1
- RS stock no.:
- 348-907
- Mfr. Part No.:
- ISA250300C04LMDSXTMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 20 units)*
R 180,56
(exc. VAT)
R 207,64
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 4,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 180 | R 9.028 | R 180.56 |
| 200 - 480 | R 8.802 | R 176.04 |
| 500 - 980 | R 8.538 | R 170.76 |
| 1000 - 1980 | R 8.197 | R 163.94 |
| 2000 + | R 7.869 | R 157.38 |
*price indicative
- RS stock no.:
- 348-907
- Mfr. Part No.:
- ISA250300C04LMDSXTMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N, Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7.9A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | ISA | |
| Package Type | PG-DSO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 35mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 8.1nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC61249‐2‐21, JEDEC | |
| Length | 6.2mm | |
| Height | 1.75mm | |
| Width | 5 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N, Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7.9A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series ISA | ||
Package Type PG-DSO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 35mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 8.1nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC61249‐2‐21, JEDEC | ||
Length 6.2mm | ||
Height 1.75mm | ||
Width 5 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon OptiMOS 3 Power Transistors available in complementary N and P channel configurations, are designed for high efficiency switching applications. These MOSFETs feature very low on resistance (RDS(on)), which minimizes conduction losses and enhances overall system performance. Additionally, they offer superior thermal resistance, ensuring better heat dissipation and reliability in demanding applications. These characteristics make them ideal for various power management and energy efficient designs.
100% avalanche tested
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249‑2‑21
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