Infineon BSO080P03S H OptiMOSTM-P Type P-Channel MOSFET, -14.9 A, -30 V Enhancement, 8-Pin PG-DSO-8 BSO080P03SHXUMA1
- RS stock no.:
- 273-5241
- Mfr. Part No.:
- BSO080P03SHXUMA1
- Manufacturer:
- Infineon
Image representative of range
Subtotal (1 reel of 2500 units)*
R 33 480,00
(exc. VAT)
R 38 502,50
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 24 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 + | R 13.392 | R 33,480.00 |
*price indicative
- RS stock no.:
- 273-5241
- Mfr. Part No.:
- BSO080P03SHXUMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -14.9A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Series | BSO080P03S H OptiMOSTM-P | |
| Package Type | PG-DSO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -0.82V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Typical Gate Charge Qg @ Vgs | -102nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.5mm | |
| Width | 40 mm | |
| Standards/Approvals | IEC61249-2-21, JEDEC, RoHS | |
| Length | 40mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -14.9A | ||
Maximum Drain Source Voltage Vds -30V | ||
Series BSO080P03S H OptiMOSTM-P | ||
Package Type PG-DSO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -0.82V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Typical Gate Charge Qg @ Vgs -102nC | ||
Maximum Operating Temperature 150°C | ||
Height 1.5mm | ||
Width 40 mm | ||
Standards/Approvals IEC61249-2-21, JEDEC, RoHS | ||
Length 40mm | ||
Automotive Standard No | ||
The Infineon MOSFET is a P channel power MOSFET. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on state resistance and figure of merit characteristics. It has 150 degree Celsius operating temperature and qualified according JEDEC for target applications.
Logic level
Halogen free
RoHS compliant
Pb free lead plating
Enhancement mode
Related links
- Infineon P-Channel MOSFET 30 V, 8-Pin PG-DSO-8 BSO080P03SHXUMA1
- Infineon P-Channel MOSFET 30 V, 8-Pin PG-DSO-8 BSO301SPHXUMA1
- Infineon ISA Dual N/P-Channel-Channel MOSFET 30 V, 8-Pin PG-DSO-8 ISA150233C03LMDSXTMA
- Vishay TrenchFET P-Channel MOSFET 30 V, 8-Pin SO-8 SI4825DDY-T1-GE3
- Infineon ISA Dual N/P-Channel-Channel MOSFET 40 V, 8-Pin PG-DSO-8 ISA170230C04LMDSXTMA1
- Infineon ISA Dual N/P-Channel-Channel MOSFET 40 V, 8-Pin PG-DSO-8 ISA250300C04LMDSXTMA1
- Infineon OptiMOS P P-Channel MOSFET 20 V, 8-Pin SOIC BSO201SPHXUMA1
- Infineon ISA Dual Dual N-Channel MOSFET 40 V, 8-Pin PG-DSO-8 ISA170170N04LMDSXTMA1