Infineon HEXFET Type P-Channel MOSFET, -11 A, -55 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 3000 units)*

R 16 512,00

(exc. VAT)

R 18 990,00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +R 5.504R 16,512.00

*price indicative

RS stock no.:
262-6769
Mfr. Part No.:
IRFR9024NTRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

-11A

Maximum Drain Source Voltage Vds

-55V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

175mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.6V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

12.7nC

Maximum Power Dissipation Pd

38W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. It provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

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