P-Channel MOSFET, 11 A, 55 V, 3-Pin IPAK Infineon IRFU9024NPBF

This P-channel MOSFET is intended for high-efficiency power management applications. It has a maximum continuous drain current of 11A and a maximum drain-source voltage of 55V, adept at handling significant loads while ensuring reliability in various operational conditions. Its through-hole mounting type allows for seamless integration into existing designs, making it a key component for professionals in automation and electronics.

• Low Rds(on) of 175mΩ enhances energy efficiency
• Maximum power dissipation of 38W supports robust performance
• Single transistor configuration simplifies design processes
• Complies with lead-free standards for environmentally conscious applications

• Suitable for power supplies and conversion circuits
• Utilised in motor control systems for effective operation
• Integrated into battery management systems for improved performance
• Applicable in automotive environments for dependable power handling
• Ideal for industrial automation equipment requiring robust performance

The component operates effectively within a temperature range of -55°C to +150°C, ensuring reliable performance in various environments.

With a maximum power dissipation of 38W and low Rds(on) of 175mΩ, it manages high power loads with minimal energy loss.

Yes, the through-hole mounting type is compatible with standard PCB layouts, facilitating straightforward integration.

A gate-source voltage range of -20V to +20V provides flexibility

Its low on-resistance and high current capability maximise efficiency in various power management scenarios.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.