Infineon HEXFET Type P-Channel MOSFET, -11 A, -55 V Enhancement, 3-Pin TO-252 IRFR9024NTRLPBF
- RS stock no.:
- 262-6770
- Distrelec Article No.:
- 304-41-678
- Mfr. Part No.:
- IRFR9024NTRLPBF
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
R 473,87
(exc. VAT)
R 544,95
(inc. VAT)
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Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 18.955 | R 473.88 |
| 50 - 75 | R 18.481 | R 462.03 |
| 100 - 225 | R 17.926 | R 448.15 |
| 250 - 975 | R 17.209 | R 430.23 |
| 1000 + | R 16.521 | R 413.03 |
*price indicative
- RS stock no.:
- 262-6770
- Distrelec Article No.:
- 304-41-678
- Mfr. Part No.:
- IRFR9024NTRLPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -11A | |
| Maximum Drain Source Voltage Vds | -55V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 175mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.6V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 38W | |
| Typical Gate Charge Qg @ Vgs | 12.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -11A | ||
Maximum Drain Source Voltage Vds -55V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 175mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.6V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 38W | ||
Typical Gate Charge Qg @ Vgs 12.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. It provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Fully avalanche rated
Fast switching
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