Infineon HEXFET Type N-Channel MOSFET, 210 A, 40 V Enhancement, 3-Pin TO-220 IRF2204PBF
- RS stock no.:
- 262-6722
- Distrelec Article No.:
- 304-41-665
- Mfr. Part No.:
- IRF2204PBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 5 units)*
R 248,51
(exc. VAT)
R 285,785
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 1,025 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 49.702 | R 248.51 |
| 50 - 95 | R 48.46 | R 242.30 |
| 100 - 245 | R 47.006 | R 235.03 |
| 250 - 495 | R 45.126 | R 225.63 |
| 500 + | R 43.32 | R 216.60 |
*price indicative
- RS stock no.:
- 262-6722
- Distrelec Article No.:
- 304-41-665
- Mfr. Part No.:
- IRF2204PBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 210A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 210A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. This design has additional features such as 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
Ultra low on-resistance
Dynamic dv/dt rating
Repetitive avalanche allowed up to Tjmax
Related links
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220 IRFB3206PBF
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-220 IRFB3077PBF
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263 IRF3805STRLPBF
- ROHM RS6 Type N-Channel MOSFET 40 V Enhancement, 8-Pin HSOP-8 RS6G120BHTB1