Infineon HEXFET Type N-Channel MOSFET, 210 A, 60 V Enhancement, 3-Pin TO-220

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Bulk discount available

Subtotal (1 tube of 50 units)*

R 1 323,55

(exc. VAT)

R 1 522,10

(inc. VAT)

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  • 50 unit(s) ready to ship from another location
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Units
Per unit
Per Tube*
50 - 50R 26.471R 1,323.55
100 - 200R 25.809R 1,290.45
250 - 450R 25.035R 1,251.75
500 - 950R 24.034R 1,201.70
1000 +R 23.072R 1,153.60

*price indicative

RS stock no.:
124-8962
Mfr. Part No.:
IRFB3206PBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

210A

Maximum Drain Source Voltage Vds

60V

Series

HEXFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

120nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

300W

Forward Voltage Vf

-1.2V

Maximum Operating Temperature

175°C

Width

4.83 mm

Standards/Approvals

No

Height

9.02mm

Length

10.67mm

Automotive Standard

No

COO (Country of Origin):
CN

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