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    N-Channel MOSFET, 343 A, 40 V, 3-Pin TO-220AB Infineon IRLB3034PBF

    RS stock no.:
    124-9024
    Mfr. Part No.:
    IRLB3034PBF
    Manufacturer:
    Infineon
    Infineon
    View all MOSFETs
    950 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
    Add to Basket
    units

    Not Available for premium delivery

    Added

    Price (Excl VAT) Each (In a Tube of 50)

    R 69.351

    (exc. VAT)

    R 79.754

    (inc. VAT)

    unitsPer unitPer Tube*
    50 - 50R 69.351R 3,467.55
    100 - 200R 67.617R 3,380.85
    250 - 450R 65.588R 3,279.40
    500 - 950R 62.965R 3,148.25
    1000 +R 60.446R 3,022.30
    *price indicative
    RS stock no.:
    124-9024
    Mfr. Part No.:
    IRLB3034PBF
    Manufacturer:
    Infineon
    COO (Country of Origin):
    MX

    Legislation and Compliance

    COO (Country of Origin):
    MX

    Product Details

    Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon


    Motor Control MOSFET


    Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.

    Synchronous Rectifier MOSFET


    A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.


    MOSFET Transistors, Infineon


    Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

    Specification

    AttributeValue
    Channel TypeN
    Maximum Continuous Drain Current343 A
    Maximum Drain Source Voltage40 V
    Package TypeTO-220AB
    Mounting TypeThrough Hole
    Pin Count3
    Maximum Drain Source Resistance2 mΩ
    Channel ModeEnhancement
    Maximum Gate Threshold Voltage2.5V
    Minimum Gate Threshold Voltage1V
    Maximum Power Dissipation375 W
    Transistor ConfigurationSingle
    Maximum Gate Source Voltage-20 V, +20 V
    Length10.67mm
    Typical Gate Charge @ Vgs108 nC @ 4.5 V
    Width4.83mm
    Maximum Operating Temperature+175 °C
    Number of Elements per Chip1
    Transistor MaterialSi
    Minimum Operating Temperature-55 °C
    Height9.02mm
    SeriesHEXFET
    950 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
    Add to Basket
    units

    Not Available for premium delivery

    Added

    Price (Excl VAT) Each (In a Tube of 50)

    R 69.351

    (exc. VAT)

    R 79.754

    (inc. VAT)

    unitsPer unitPer Tube*
    50 - 50R 69.351R 3,467.55
    100 - 200R 67.617R 3,380.85
    250 - 450R 65.588R 3,279.40
    500 - 950R 62.965R 3,148.25
    1000 +R 60.446R 3,022.30
    *price indicative