Infineon iPB Type N-Channel MOSFET, 120 A, 60 V Enhancement, 3-Pin TO-263 IPB029N06NF2SATMA1

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Subtotal (1 pack of 5 units)*

R 112,15

(exc. VAT)

R 128,95

(inc. VAT)

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  • 550 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
5 - 20R 22.43R 112.15
25 - 45R 21.87R 109.35
50 - 95R 21.214R 106.07
100 - 245R 20.366R 101.83
250 +R 19.552R 97.76

*price indicative

Packaging Options:
RS stock no.:
262-5859
Mfr. Part No.:
IPB029N06NF2SATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

60V

Series

iPB

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.15mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon N channel power transistor is optimized for wide range of applications and it is 100 percent avalanche tested.

Pb-free lead plating

RoHS compliant

Halogen free according to IEC61249-2-21

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