Infineon iPB Type N-Channel MOSFET, 120 A, 60 V Enhancement, 3-Pin TO-263 IPB029N06NF2SATMA1

Image representative of range

Bulk discount available

Subtotal (1 pack of 5 units)*

R 170,85

(exc. VAT)

R 196,50

(inc. VAT)

Add to Basket
Select or type quantity
Orders below R 1 500,00 (exc. VAT) cost R 120,00.
In Stock
  • 550 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
5 - 20R 34.17R 170.85
25 - 45R 33.316R 166.58
50 - 95R 32.316R 161.58
100 - 245R 31.024R 155.12
250 +R 29.784R 148.92

*price indicative

Packaging Options:
RS stock no.:
262-5859
Mfr. Part No.:
IPB029N06NF2SATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

60V

Series

iPB

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.15mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon N channel power transistor is optimized for wide range of applications and it is 100 percent avalanche tested.

Pb-free lead plating

RoHS compliant

Halogen free according to IEC61249-2-21

Related links