Infineon iPB Type N-Channel MOSFET, 187 A, 60 V Enhancement, 3-Pin TO-263 IPB018N06NF2SATMA1

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Subtotal (1 pack of 5 units)*

R 197,30

(exc. VAT)

R 226,90

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 20R 39.46R 197.30
25 - 45R 38.474R 192.37
50 - 95R 37.32R 186.60
100 - 245R 35.828R 179.14
250 +R 34.394R 171.97

*price indicative

Packaging Options:
RS stock no.:
262-5855
Mfr. Part No.:
IPB018N06NF2SATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

187A

Maximum Drain Source Voltage Vds

60V

Series

iPB

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.15mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon N channel power transistor is optimized for wide range of applications and it is 100 percent avalanche tested.

Pb-free lead plating

RoHS compliant

Halogen free according to IEC61249-2-21

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