Infineon iPB N-Channel MOSFET, 120 A, 40 V Enhancement TO-263 IPB120N04S402ATMA1
- RS stock no.:
- 259-1550
- Mfr. Part No.:
- IPB120N04S402ATMA1
- Manufacturer:
- Infineon
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View bulk pricing optionsSubtotal (1 pack of 2 units)*
R 116,47
(exc. VAT)
R 133,94
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 2,996 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | R 58.235 | R 116.47 |
| 50 - 98 | R 56.78 | R 113.56 |
| 100 - 248 | R 55.075 | R 110.15 |
| 250 - 498 | R 52.87 | R 105.74 |
| 500 + | R 50.755 | R 101.51 |
*price indicative
- RS stock no.:
- 259-1550
- Mfr. Part No.:
- IPB120N04S402ATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | iPB | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 1.80mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | +175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series iPB | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 1.80mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature +175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon iPB Series MOSFET, 40V Drain-Source Voltage, 120A Continuous Drain Current - IPB120N04S402ATMA1
This MOSFET is a high-current enhancement-mode N-channel device designed for surface-mounted power switching. It operates across a wide temperature range suitable for demanding environments and conforms to industry environmental directives and automotive stress standards.
Features and Benefits:
• 1.80mΩ low Rds(on) reduces conduction losses
• 40V voltage rating supports medium-voltage power stages
• 120A continuous drain current enables high-current delivery
• TO-263 surface package simplifies thermal management
• -55°C to +175°C range sustains extreme temperature operation
• 40V voltage rating supports medium-voltage power stages
• 120A continuous drain current enables high-current delivery
• TO-263 surface package simplifies thermal management
• -55°C to +175°C range sustains extreme temperature operation
Applications
• Suitable for automotive power conversion modules
• Ideal for industrial motor drive stages
• Used with high-current DC distribution systems
• Can be used for power switching in harsh environments
• Ideal for industrial motor drive stages
• Used with high-current DC distribution systems
• Can be used for power switching in harsh environments
What mounting style does it require?
It is intended for surface mounting in the TO-263 package format.
Which temperature extremes can it withstand during operation?
It is rated to function from -55°C up to +175°C.
Does it meet automotive qualification standards?
It complies with the AEC‑Q101 automotive qualification.
What channel configuration and mode does it use?
It is an enhancement-mode N-channel transistor.
Are there environmental restrictions for its materials?
It is RoHS-compliant.
Related links
- Infineon iPB N-Channel MOSFET 40 V Enhancement TO-263
- Infineon iPB N-Channel MOSFET, 120 A Enhancement TO-263
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- Infineon iPB N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- Infineon iPB N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263 IPB029N06NF2SATMA1
- Infineon iPB N-Channel MOSFET 120 V N TO-263
- Infineon iPB N-Channel MOSFET 120 V N TO-263 IPB038N12N3GATMA1
- Infineon iPB N-Channel MOSFET 120 V Enhancement TO-263