Infineon iPB Type N-Channel MOSFET, 190 A, 60 V Enhancement, 3-Pin TO-263 IPB013N06NF2SATMA1

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Subtotal (1 pack of 2 units)*

R 147,56

(exc. VAT)

R 169,70

(inc. VAT)

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In Stock
  • 798 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
2 - 8R 73.78R 147.56
10 - 48R 71.935R 143.87
50 - 98R 69.775R 139.55
100 - 248R 66.985R 133.97
250 +R 64.305R 128.61

*price indicative

Packaging Options:
RS stock no.:
262-5848
Mfr. Part No.:
IPB013N06NF2SATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

190A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-263

Series

iPB

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.15mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon N channel power transistor is optimized for wide range of applications and it is 100 percent avalanche tested.

Pb-free lead plating

RoHS compliant

Halogen free according to IEC61249-2-21

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