Infineon HEXFET N-Channel MOSFET, 180 A, 30 V WDSON IRF6727MTRPBF
- RS stock no.:
- 258-3966
- Mfr. Part No.:
- IRF6727MTRPBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 4800 units)*
R 75 288,00
(exc. VAT)
R 86 582,40
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 23 February 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 4800 - 4800 | R 15.685 | R 75,288.00 |
| 9600 - 9600 | R 15.293 | R 73,406.40 |
| 14400 + | R 14.835 | R 71,208.00 |
*price indicative
- RS stock no.:
- 258-3966
- Mfr. Part No.:
- IRF6727MTRPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | WDSON | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 2.4mΩ | |
| Maximum Power Dissipation Pd | 89W | |
| Typical Gate Charge Qg @ Vgs | 49nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 770mV | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type WDSON | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 2.4mΩ | ||
Maximum Power Dissipation Pd 89W | ||
Typical Gate Charge Qg @ Vgs 49nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 770mV | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon StrongIRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
High-current rating
Dual-side cooling capability
Low package height of 0.7mm
Compact form factor
High efficiency
Environmentally friendly
Related links
- Infineon HEXFET N-Channel MOSFET 30 V WDSON IRF6727MTRPBF
- Infineon HEXFET N-Channel MOSFET 80 V WDSON
- Infineon HEXFET N-Channel MOSFET 100 V TO-263
- Infineon HEXFET N-Channel MOSFET 40 V, 3-Pin TO-263
- Infineon HEXFET N-Channel MOSFET 80 V WDSON IRF6646TRPBF
- Infineon HEXFET N-Channel MOSFET 75 V TO-220
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220AB
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220