Infineon HEXFET Type N-Channel MOSFET, 68 A, 80 V WDSON IRF6646TRPBF
- RS stock no.:
- 258-3963
- Mfr. Part No.:
- IRF6646TRPBF
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 2 units)*
R 80,95
(exc. VAT)
R 93,092
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 4,688 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 40.475 | R 80.95 |
| 10 - 98 | R 39.465 | R 78.93 |
| 100 - 248 | R 38.28 | R 76.56 |
| 250 - 498 | R 36.75 | R 73.50 |
| 500 + | R 35.28 | R 70.56 |
*price indicative
- RS stock no.:
- 258-3963
- Mfr. Part No.:
- IRF6646TRPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 68A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | HEXFET | |
| Package Type | WDSON | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 9.5mΩ | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 89W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 68A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series HEXFET | ||
Package Type WDSON | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 9.5mΩ | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 89W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon HEXFET Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes.
Application Specific MOSFETs
Ideal for High Performance Isolated Converter
Primary Switch Socket
Optimized for Synchronous Rectification
Low Conduction Losses
High Cdv/dt Immunity
Low Profile (<0.7mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Technique
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