Infineon HEXFET Type N-Channel MOSFET, 68 A, 80 V WDSON IRF6646TRPBF

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Subtotal (1 pack of 2 units)*

R 109,16

(exc. VAT)

R 125,54

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 54.58R 109.16
10 - 98R 53.215R 106.43
100 - 248R 51.62R 103.24
250 - 498R 49.555R 99.11
500 +R 47.575R 95.15

*price indicative

Packaging Options:
RS stock no.:
258-3963
Mfr. Part No.:
IRF6646TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

68A

Maximum Drain Source Voltage Vds

80V

Package Type

WDSON

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

9.5mΩ

Minimum Operating Temperature

-40°C

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

89W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

36nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon HEXFET Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes.

Application Specific MOSFETs

Ideal for High Performance Isolated Converter

Primary Switch Socket

Optimized for Synchronous Rectification

Low Conduction Losses

High Cdv/dt Immunity

Low Profile (<0.7mm)

Dual Sided Cooling Compatible

Compatible with existing Surface Mount Technique

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