Infineon IPD Type N-Channel MOSFET, 180 A, 100 V N, 3-Pin TO-252 IPD50N10S3L16ATMA1

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Subtotal (1 pack of 2 units)*

R 31,24

(exc. VAT)

R 35,92

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 15.62R 31.24
10 - 98R 15.23R 30.46
100 - 248R 14.775R 29.55
250 - 498R 14.185R 28.37
500 +R 13.62R 27.24

*price indicative

Packaging Options:
RS stock no.:
244-0878
Mfr. Part No.:
IPD50N10S3L16ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Series

IPD

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.7mΩ

Channel Mode

N

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

81W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon MOSFET OptiMOSTM Power Transistor is a Green product RoHS compliant and is Automotive AEC Q101 qualified.

N-channel - Enhancement mode

MSL1 up to 260°C peak reflow

175°C operating temperature

100% Avalanche tested

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