Infineon HEXFET Type N-Channel MOSFET, 195 A, 60 V TO-263 IRFS7530TRLPBF

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Subtotal (1 pack of 2 units)*

R 46,59

(exc. VAT)

R 53,578

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 23.295R 46.59
10 - 48R 22.715R 45.43
50 - 98R 22.035R 44.07
100 - 248R 21.155R 42.31
250 +R 20.31R 40.62

*price indicative

Packaging Options:
RS stock no.:
257-9438
Mfr. Part No.:
IRFS7530TRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

195A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-263

Series

HEXFET

Maximum Drain Source Resistance Rds

2mΩ

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

274nC

Maximum Power Dissipation Pd

375W

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRFS series is the 60V single n channel HEXFET power mosfet in a D2 Pak package.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Optimized for 10 V gate drive voltage (called normal level)

Silicon optimized for applications switching below 100 kHz

Softer body diode compared to previous silicon generation

Industry standard surface mount power package

Capable of being wave soldered


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