Infineon HEXFET Type N-Channel MOSFET, 195 A, 40 V Enhancement, 3-Pin TO-262 IRFSL7437PBF
- RS stock no.:
- 262-6774
- Distrelec Article No.:
- 304-41-679
- Mfr. Part No.:
- IRFSL7437PBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 206,03
(exc. VAT)
R 236,935
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 1,090 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 41.206 | R 206.03 |
| 50 - 95 | R 40.176 | R 200.88 |
| 100 - 245 | R 38.97 | R 194.85 |
| 250 - 495 | R 37.412 | R 187.06 |
| 500 + | R 35.916 | R 179.58 |
*price indicative
- RS stock no.:
- 262-6774
- Distrelec Article No.:
- 304-41-679
- Mfr. Part No.:
- IRFSL7437PBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 195A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-262 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.075Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 195A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-262 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.075Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon power MOSFET provides benefits such as improved gate, avalanche and dynamic dV/dt ruggedness and fully characterized capacitance and avalanche SOA.
Halogen free
Enhanced body diode dV/dt and dI/dt capability
Related links
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-262
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- Infineon StrongIRFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-247
- Infineon StrongIRFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-262
