Infineon HEXFET Type N-Channel MOSFET, 195 A, 150 V Enhancement, 3-Pin TO-263 IRFS4115TRLPBF

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Subtotal (1 pack of 4 units)*

R 297,78

(exc. VAT)

R 342,448

(inc. VAT)

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Units
Per unit
Per Pack*
4 - 36R 74.445R 297.78
40 - 196R 72.585R 290.34
200 - 396R 70.408R 281.63
400 - 996R 67.59R 270.36
1000 +R 64.888R 259.55

*price indicative

Packaging Options:
RS stock no.:
915-5033
Mfr. Part No.:
IRFS4115TRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

195A

Maximum Drain Source Voltage Vds

150V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

12.1mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

375W

Typical Gate Charge Qg @ Vgs

77nC

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

10.67mm

Height

4.83mm

Width

11.3 mm

Automotive Standard

AEC-Q101

Distrelec Product Id

304-44-468

N-Channel Power MOSFET 150V to 600V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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