Infineon HEXFET Type N-Channel MOSFET, 195 A, 60 V TO-263
- RS stock no.:
- 257-9437
- Mfr. Part No.:
- IRFS7530TRLPBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 reel of 800 units)*
R 23 441,60
(exc. VAT)
R 26 957,60
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 20 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 800 - 1600 | R 29.302 | R 23,441.60 |
| 2400 + | R 28.57 | R 22,856.00 |
*price indicative
- RS stock no.:
- 257-9437
- Mfr. Part No.:
- IRFS7530TRLPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 195A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 274nC | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 195A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 274nC | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRFS series is the 60V single n channel HEXFET power mosfet in a D2 Pak package.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Optimized for 10 V gate drive voltage (called normal level)
Silicon optimized for applications switching below 100 kHz
Softer body diode compared to previous silicon generation
Industry standard surface mount power package
Capable of being wave soldered
Related links
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