Infineon HEXFET Type N-Channel MOSFET, 24 A, 200 V TO-263 IRFS4620TRLPBF
- RS stock no.:
- 257-9436
- Mfr. Part No.:
- IRFS4620TRLPBF
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionSubtotal (1 pack of 5 units)*
R 185,77
(exc. VAT)
R 213,635
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 350 unit(s) shipping from 01 June 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | R 37.154 | R 185.77 |
| 25 - 45 | R 36.226 | R 181.13 |
| 50 - 95 | R 35.14 | R 175.70 |
| 100 - 245 | R 33.734 | R 168.67 |
| 250 + | R 32.384 | R 161.92 |
*price indicative
- RS stock no.:
- 257-9436
- Mfr. Part No.:
- IRFS4620TRLPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Maximum Drain Source Resistance Rds | 77.5mΩ | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Power Dissipation Pd | 144W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Maximum Drain Source Resistance Rds 77.5mΩ | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Power Dissipation Pd 144W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRFS series is the 200V single n channel HEXFET Power mosfet in a D2 Pak package.
Improved gate, avalanche and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and dI/dt capability lead free
Related links
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