Infineon HEXFET Type N-Channel MOSFET, 24 A, 100 V Enhancement, 3-Pin TO-220 IRFI1310NPBF
- RS stock no.:
- 262-6752
- Distrelec Article No.:
- 304-34-458
- Mfr. Part No.:
- IRFI1310NPBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 177,06
(exc. VAT)
R 203,62
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 3,795 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 35.412 | R 177.06 |
| 50 - 95 | R 34.526 | R 172.63 |
| 100 - 245 | R 33.49 | R 167.45 |
| 250 - 995 | R 32.15 | R 160.75 |
| 1000 + | R 30.864 | R 154.32 |
*price indicative
- RS stock no.:
- 262-6752
- Distrelec Article No.:
- 304-34-458
- Mfr. Part No.:
- IRFI1310NPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.036Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.036Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. It has 4.8mm sink to lead creep age distance. It provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Fully avalanche rated
High voltage isolation 2.5KVRMS
Related links
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