Infineon HEXFET Type N-Channel MOSFET, 24 A, 100 V Enhancement, 3-Pin TO-220 IRFI1310NPBF
- RS stock no.:
- 262-6752
- Mfr. Part No.:
- IRFI1310NPBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 154,33
(exc. VAT)
R 177,48
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 3,800 unit(s) shipping from 30 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 30.866 | R 154.33 |
| 50 - 95 | R 30.094 | R 150.47 |
| 100 - 245 | R 29.192 | R 145.96 |
| 250 - 995 | R 28.024 | R 140.12 |
| 1000 + | R 26.904 | R 134.52 |
*price indicative
- RS stock no.:
- 262-6752
- Mfr. Part No.:
- IRFI1310NPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.036Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Standards/Approvals | No | |
| Distrelec Product Id | 304-34-458 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.036Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Standards/Approvals No | ||
Distrelec Product Id 304-34-458 | ||
Automotive Standard No | ||
The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. It has 4.8mm sink to lead creep age distance. It provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Fully avalanche rated
High voltage isolation 2.5KVRMS
Related links
- Infineon HEXFET Silicon N-Channel MOSFET 100 V, 3-Pin TO-220 Full-Pak IRFI1310NPBF
- Infineon HEXFET Silicon N-Channel MOSFET 100 V, 3-Pin TO-220 Full-Pak IRFI530NPBF
- Infineon HEXFET Silicon N-Channel MOSFET 100 V, 3-Pin IPAK IRLU3410PBF
- Infineon HEXFET Silicon N-Channel MOSFET 100 V, 3-Pin IPAK IRFU3910PBF
- Infineon HEXFET Silicon N-Channel MOSFET 25 V, 4-Pin PQFN 5 x 6 IRFH5250TRPBF
- Infineon HEXFET Dual Silicon N-Channel MOSFET 100 V, 8-Pin SO-8 IRF7473TRPBF
- Infineon HEXFET Dual Silicon N-Channel MOSFET 55 V, 3-Pin TO-220 Full-Pak IRFIZ44NPBF
- Infineon HEXFET Dual Silicon N-Channel MOSFET 55 V, 3-Pin TO-220 Full-Pak IRFI3205PBF