Infineon HEXFET Type N-Channel MOSFET, 24 A, 200 V TO-263

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Subtotal (1 reel of 800 units)*

R 10 262,40

(exc. VAT)

R 11 801,60

(inc. VAT)

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  • Shipping from 09 November 2026
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Units
Per unit
Per Reel*
800 - 1600R 12.828R 10,262.40
2400 +R 12.507R 10,005.60

*price indicative

RS stock no.:
257-9434
Mfr. Part No.:
IRFS4620TRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

24A

Maximum Drain Source Voltage Vds

200V

Series

HEXFET

Package Type

TO-263

Maximum Drain Source Resistance Rds

77.5mΩ

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

25nC

Maximum Power Dissipation Pd

144W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRFS series is the 200V single n channel HEXFET Power mosfet in a D2 Pak package.

Improved gate, avalanche and dynamic dV/dt ruggedness

Fully characterized capacitance and avalanche SOA

Enhanced body diode dV/dt and dI/dt capability lead free

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