Infineon HEXFET Type N-Channel MOSFET, 80 A, 75 V TO-252 IRFR3607TRPBF

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Subtotal (1 pack of 5 units)*

R 148,98

(exc. VAT)

R 171,325

(inc. VAT)

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  • 4,770 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
5 - 45R 29.796R 148.98
50 - 95R 29.052R 145.26
100 - 245R 28.18R 140.90
250 - 995R 27.052R 135.26
1000 +R 25.97R 129.85

*price indicative

Packaging Options:
RS stock no.:
257-9406
Mfr. Part No.:
IRFR3607TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

75V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

9mΩ

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

140W

Typical Gate Charge Qg @ Vgs

56nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRFR series is the 75V single n channel HEXFET power mosfet in a D Pak package. The IR mosfet family of power mosfets utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as dc motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below 100 kHz

Industry standard surface mount package

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