Infineon HEXFET Type N-Channel MOSFET, 80 A, 75 V Enhancement, 3-Pin IPAK IRFU3607PBF

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Subtotal (1 tube of 75 units)*

R 1 446,60

(exc. VAT)

R 1 663,575

(inc. VAT)

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Units
Per unit
Per Tube*
75 +R 19.288R 1,446.60

*price indicative

RS stock no.:
165-7585
Mfr. Part No.:
IRFU3607PBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

75V

Package Type

IPAK

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

9mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

56nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

140W

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Length

6.73mm

Width

2.39 mm

Standards/Approvals

No

Height

6.22mm

Automotive Standard

No

COO (Country of Origin):
MX

N-Channel Power MOSFET 60V to 80V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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