Infineon HEXFET Type N-Channel MOSFET, 80 A, 75 V TO-252

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Subtotal (1 reel of 2000 units)*

R 23 398,00

(exc. VAT)

R 26 908,00

(inc. VAT)

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Units
Per unit
Per Reel*
2000 - 4000R 11.699R 23,398.00
6000 - 10000R 11.406R 22,812.00
12000 +R 11.064R 22,128.00

*price indicative

RS stock no.:
257-9405
Mfr. Part No.:
IRFR3607TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

75V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Maximum Drain Source Resistance Rds

9mΩ

Maximum Power Dissipation Pd

140W

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

56nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRFR series is the 75V single n channel HEXFET power mosfet in a D Pak package. The IR mosfet family of power mosfets utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as dc motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below 100 kHz

Industry standard surface mount package

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