Infineon HEXFET Type N-Channel MOSFET, 79 A, 60 V TO-220 IRF1018ESTRLPBF
- RS stock no.:
- 257-9268
- Distrelec Article No.:
- 304-40-513
- Mfr. Part No.:
- IRF1018ESTRLPBF
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 138,44
(exc. VAT)
R 159,205
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 3,175 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | R 27.688 | R 138.44 |
| 25 - 45 | R 26.996 | R 134.98 |
| 50 - 95 | R 26.186 | R 130.93 |
| 100 - 245 | R 25.138 | R 125.69 |
| 250 + | R 24.132 | R 120.66 |
*price indicative
- RS stock no.:
- 257-9268
- Distrelec Article No.:
- 304-40-513
- Mfr. Part No.:
- IRF1018ESTRLPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 79A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 8.4mΩ | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 110W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 79A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 8.4mΩ | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 110W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon IRF series is the 60V single n channel HEXFET power mosfet in a D2 Pak package.
Improved gate, avalanche and dynamic dv/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and dI/dt capability
Related links
- Infineon HEXFET Type N-Channel MOSFET 60 V TO-220
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220 IRF1018EPBF
- Infineon HEXFET Type N-Channel MOSFET 60 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 60 V TO-252 IRFR1018ETRPBF
- Infineon HEXFET Type N-Channel MOSFET 60 V TO-220
- Infineon HEXFET Type N-Channel MOSFET 60 V TO-220
- Infineon HEXFET Type N-Channel MOSFET 60 V TO-220