Vishay Type P-Channel MOSFET, 13.6 A, -30 V Enhancement, 8-Pin SO-8 SI4155DY-T1-GE3

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Subtotal (1 pack of 10 units)*

R 143,81

(exc. VAT)

R 165,38

(inc. VAT)

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Last RS stock
  • Final 5,040 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
10 - 40R 14.381R 143.81
50 - 90R 14.021R 140.21
100 - 240R 13.60R 136.00
250 - 990R 13.056R 130.56
1000 +R 12.534R 125.34

*price indicative

Packaging Options:
RS stock no.:
252-0246
Mfr. Part No.:
SI4155DY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

13.6A

Maximum Drain Source Voltage Vds

-30V

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.03mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

5.6W

Typical Gate Charge Qg @ Vgs

58nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.

TrenchFET power MOSFET

100 % Rg and UIS tested

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