Vishay Type P-Channel MOSFET, 20.5 A, -30 V Enhancement, 8-Pin SO-8 SI4151DY-T1-GE3

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Subtotal (1 pack of 5 units)*

R 153,58

(exc. VAT)

R 176,615

(inc. VAT)

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Last RS stock
  • Final 7,475 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
5 - 45R 30.716R 153.58
50 - 95R 29.948R 149.74
100 - 245R 29.05R 145.25
250 - 995R 27.888R 139.44
1000 +R 26.772R 133.86

*price indicative

Packaging Options:
RS stock no.:
252-0244
Mfr. Part No.:
SI4151DY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

20.5A

Maximum Drain Source Voltage Vds

-30V

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.01mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

58nC

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

5.6W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the gate terminal is lower than the source voltage.

TrenchFET power MOSFET

100 % Rg and UIS tested

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