Infineon BSZ Type P-Channel MOSFET, 212 A, 40 V P, 8-Pin PQFN
- RS stock no.:
- 250-0563
- Mfr. Part No.:
- BSZ15DC02KDHXTMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 reel of 5000 units)*
R 39 865,00
(exc. VAT)
R 45 845,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 25 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 5000 - 5000 | R 7.973 | R 39,865.00 |
| 10000 - 10000 | R 7.774 | R 38,870.00 |
| 15000 + | R 7.541 | R 37,705.00 |
*price indicative
- RS stock no.:
- 250-0563
- Mfr. Part No.:
- BSZ15DC02KDHXTMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 212A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | BSZ | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.5mΩ | |
| Channel Mode | P | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 212A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series BSZ | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.5mΩ | ||
Channel Mode P | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon makes this Complementary P + N channel, Enhancement mode. It is avalanche rated and halogen-free. This device is OptiMOS 2 + OptiMOS P 2 Small Signal Transistor with Super Logic level (2.5V rated). It has common drain and it is Avalanche rated. The operating temperature is 175°C. It is 100% lead-free, Halogen-free.
Super Logic level (2.5V rated)
100% lead-free
Related links
- Infineon P-Channel MOSFET 20 V, 8-Pin PQFN 3 x 3 BSZ15DC02KDHXTMA1
- Diodes Inc DMP22D5UFO P-Channel MOSFET 20 V, 3-Pin X2-DFN0604-3 DMP22D5UFO-7B
- Infineon OptiMOS P3 P-Channel MOSFET 30 V, 8-Pin PQFN 3 x 3 BSZ180P03NS3GATMA1
- Infineon OptiMOS™ 5 Silicon N-Channel MOSFET 40 V, 8-Pin PQFN 3 x 3 IPZ40N04S53R1ATMA1
- Infineon OptiMOS™ N-Channel MOSFET 40 V, 8-Pin PQFN 3 x 3 BSZ040N04LSGATMA1
- Infineon N-Channel MOSFET 60 V, 8-Pin PQFN 3 x 3 FL BSZ039N06NSATMA1
- Infineon OptiMOS™ 3 Silicon N-Channel MOSFET 100 V, 8-Pin PQFN 3 x 3 BSZ150N10LS3GATMA1
- Infineon OptiMOS™ 5 Silicon N-Channel MOSFET 100 V, 8-Pin PQFN 3 x 3 IAUZ40N10S5N130ATMA1
