Infineon BSZ Type P-Channel MOSFET, -40 A, -30 V P, 8-Pin TDSON BSZ120P03NS3GATMA1
- RS stock no.:
- 258-0719
- Mfr. Part No.:
- BSZ120P03NS3GATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 18,91
(exc. VAT)
R 21,745
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 190 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 3.782 | R 18.91 |
| 10 - 95 | R 3.688 | R 18.44 |
| 100 - 245 | R 3.578 | R 17.89 |
| 250 - 495 | R 3.434 | R 17.17 |
| 500 + | R 3.296 | R 16.48 |
*price indicative
- RS stock no.:
- 258-0719
- Mfr. Part No.:
- BSZ120P03NS3GATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -40A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Package Type | TDSON | |
| Series | BSZ | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 12mΩ | |
| Channel Mode | P | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Maximum Power Dissipation Pd | 52W | |
| Forward Voltage Vf | -1.1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC 61249-2-21, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -40A | ||
Maximum Drain Source Voltage Vds -30V | ||
Package Type TDSON | ||
Series BSZ | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 12mΩ | ||
Channel Mode P | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Maximum Power Dissipation Pd 52W | ||
Forward Voltage Vf -1.1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC 61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.
Enhancement mode
Normal level, logic level or super logic level
Avalanche rated
Pb-free lead plating; RoHS compliant
Related links
- Infineon P-Channel MOSFET 30 V PG-TDSON-8 BSZ120P03NS3GATMA1
- Infineon P-Channel MOSFET 30 V PG-TDSON-8 BSC084P03NS3GATMA1
- Infineon Dual N-Channel MOSFET 40 V PG-TDSON-8-4 IPG20N04S4L08ATMA1
- Infineon OptiMOS Power Transistor SiC P-Channel MOSFET 60 V, 8-Pin PG-TDSON-8 ISC800P06LMATMA1
- Infineon OptiMOS™ N-Channel MOSFET 40 V PG-TDSON-8 BSC019N04LSATMA1
- Infineon N-Channel MOSFET 30 V PG-TDSON-8 IPD30N03S2L20ATMA1
- Infineon N-Channel MOSFET 30 V PG-TDSON-8 IPD70N03S4L04ATMA1
- Infineon N-Channel MOSFET 30 V PG-TDSON-8 BSC0503NSIATMA1