Infineon BSZ Type N, Type P-Channel MOSFET, 5.10 A, +20 V P, 8-Pin PQFN BSZ15DC02KDHXTMA1
- RS stock no.:
- 250-0564
- Mfr. Part No.:
- BSZ15DC02KDHXTMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (5 units, in packs of 5)*
R 156,08
(exc. VAT)
R 179,49
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 340 unit(s) shipping from 11 February 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 31.216 | R 156.08 |
| 10 - 95 | R 30.436 | R 152.18 |
| 100 - 245 | R 29.522 | R 147.61 |
| 250 - 495 | R 28.342 | R 141.71 |
| 500 + | R 27.208 | R 136.04 |
*price indicative
- RS stock no.:
- 250-0564
- Mfr. Part No.:
- BSZ15DC02KDHXTMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N, Type P | |
| Maximum Continuous Drain Current Id | 5.10A | |
| Maximum Drain Source Voltage Vds | +20V | |
| Package Type | PQFN | |
| Series | BSZ | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Channel Mode | P | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N, Type P | ||
Maximum Continuous Drain Current Id 5.10A | ||
Maximum Drain Source Voltage Vds +20V | ||
Package Type PQFN | ||
Series BSZ | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Channel Mode P | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon makes this Complementary P + N channel, Enhancement mode. It is avalanche rated and halogen-free. This device is OptiMOS 2 + OptiMOS P 2 Small Signal Transistor with Super Logic level (2.5V rated). It has common drain and it is Avalanche rated. The operating temperature is 175°C. It is 100% lead-free, Halogen-free.
Super Logic level (2.5V rated)
100% lead-free
Related links
- Infineon BSZ Type P-Channel MOSFET 40 V P, 8-Pin PQFN
- Infineon BSZ Type N-Channel MOSFET 40 V N, 8-Pin PQFN
- Infineon BSZ Type P-Channel MOSFET -30 V P, 8-Pin TDSON
- Infineon BSZ Type N-Channel MOSFET 40 V N, 8-Pin PQFN BSZ018NE2LSIATMA1
- Infineon BSZ Type N-Channel MOSFET 40 V N, 8-Pin PQFN BSZ039N06NSATMA1
- Infineon BSZ Type N-Channel MOSFET 40 V N, 8-Pin PQFN BSZ024N04LS6ATMA1
- Infineon BSZ Type N-Channel MOSFET 40 V N, 8-Pin PQFN BSZ018NE2LSATMA1
- Infineon BSZ Type N-Channel MOSFET 40 V N, 8-Pin PQFN BSZ021N04LS6ATMA1