Infineon BSS Type P-Channel MOSFET, 0.9 A, 100 V Depletion, 3-Pin SOT-23 BSS169H6327XTSA1

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Subtotal (1 pack of 10 units)*

R 64,03

(exc. VAT)

R 73,63

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 10R 6.403R 64.03
20 - 90R 6.243R 62.43
100 - 240R 6.056R 60.56
250 - 490R 5.814R 58.14
500 +R 5.581R 55.81

*price indicative

Packaging Options:
RS stock no.:
250-0551
Mfr. Part No.:
BSS169H6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

0.9A

Maximum Drain Source Voltage Vds

100V

Series

BSS

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.5mΩ

Channel Mode

Depletion

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

81W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

Distrelec Product Id

304-40-500

The Infineon makes N-channel Depletion mode small signal MOSFET transistor widely used in high-switching applications. It is avalanche rated and halogen-free. It is a SIPMOS Small-Signal-Transistor, dv /dt rated and available with V GS(th) indicator on reel.

VDS is 100 V, Rds(on),max 12 W and IDSS,min is 0.09 A

Maximum power dissipation is 360mW

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