Infineon BSS Type P-Channel MOSFET, 0.15 A, 30 V Enhancement, 3-Pin SOT-23
- RS stock no.:
- 250-0557
- Mfr. Part No.:
- BSS315PH6327XTSA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 reel of 3000 units)*
R 3 531,00
(exc. VAT)
R 4 062,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 6,000 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | R 1.177 | R 3,531.00 |
| 6000 - 6000 | R 1.148 | R 3,444.00 |
| 9000 + | R 1.114 | R 3,342.00 |
*price indicative
- RS stock no.:
- 250-0557
- Mfr. Part No.:
- BSS315PH6327XTSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 0.15A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | BSS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 0.15A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series BSS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon makes P-channel with enhancement mode transistor widely used in high-switching applications. It is avalanche rated and halogen-free. The OptiMOS P 2 Small Signal-Transistor. The Logic level 4.5V rated, avalanche rated.
Logic level is 4.5V rated
100% lead-free, and Halogen-free
Maximum power dissipation is 500mW
Related links
- Infineon P-Channel MOSFET 30 V, 3-Pin SOT-23 BSS315PH6327XTSA1
- onsemi N-Channel MOSFET 30 V, 3-Pin SC-75 NTA7002NT1G
- Infineon SIPMOS® P-Channel MOSFET 60 V, 3-Pin SOT-323 BSS84PWH6327XTSA1
- Infineon P-Channel MOSFET 20 V, 6-Pin SOT-363 BSV236SPH6327XTSA1
- Infineon P-Channel MOSFET 30 V, 3-Pin SOT-23 BSS306NH6327XTSA1
- Nexperia N-Channel MOSFET 100 V215
- Nexperia P-Channel MOSFET 50 V115
- Diodes Inc N-Channel MOSFET 60 V, 3-Pin SOT-23 BS170FTA