Infineon BSS Type N-Channel MOSFET, 0.28 A, 40 V Enhancement, 3-Pin SOT-323 BSS138WH6327XTSA1

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Subtotal (1 pack of 10 units)*

R 7,05

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R 8,11

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 10R 0.705R 7.05
20 - 90R 0.687R 6.87
100 - 240R 0.666R 6.66
250 - 490R 0.639R 6.39
500 +R 0.613R 6.13

*price indicative

Packaging Options:
RS stock no.:
250-0542
Mfr. Part No.:
BSS138WH6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

0.28A

Maximum Drain Source Voltage Vds

40V

Series

BSS

Package Type

SOT-323

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon makes SIPMOS Small-Signal-Transistor, N-channel, Enhancement mode. The device is dv /dt rated and Pb-free lead-plating. It has Vds of 60 V, Rds(on)max is 3.5 Ω and Id is 0.28 A. It is Halogen-free, P-channel Enhancement mode transistor widely used in high-switching applications. It is avalanche rated and halogen-free.

100% lead-free

Maximum power dissipation is 360mW

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