Infineon iPB Type N-Channel MOSFET, 273 A, 100 V Enhancement, 3-Pin TO-263 IPB120N10S405ATMA1

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R 42,63

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R 49,02

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1 - 9R 42.63
10 - 99R 41.56
100 - 249R 40.31
250 - 499R 38.70
500 +R 37.15

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Packaging Options:
RS stock no.:
242-5825
Mfr. Part No.:
IPB120N10S405ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

273A

Maximum Drain Source Voltage Vds

100V

Series

iPB

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.7mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon MOSFET offers D2PAK package is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements.

N-channel - Normal Level - Enhancement mode

AEC Q101 qualified

MSL1 up to 260°C peak reflow

175°C operating temperature

100% Avalanche tested

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