Infineon IPT Type N-Channel MOSFET, 454 A, 60 V, 8-Pin HSOF-8 IPT008N06NM5LFATMA1

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Subtotal (1 reel of 2000 units)*

R 107 404,00

(exc. VAT)

R 123 514,00

(inc. VAT)

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Units
Per unit
Per Reel*
2000 - 2000R 53.702R 107,404.00
4000 - 4000R 52.36R 104,720.00
6000 +R 50.789R 101,578.00

*price indicative

RS stock no.:
236-1584
Mfr. Part No.:
IPT008N06NM5LFATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

454A

Maximum Drain Source Voltage Vds

60V

Series

IPT

Package Type

HSOF-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.8mΩ

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

185nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

278W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

10.58 mm

Height

2.4mm

Length

10.1mm

Automotive Standard

No

The Infineon OptiMOS 5 Linear FET, 60 V MOSFET . This product is fully qualified according to JEDEC for industrial applications .

Ideal for hot-swap and e-fuse applications

Very low on-resistance RDS(on)

Wide safe operating area SOA

N-channel, normal level

100% avalanche tested

Pb-free plating, halogen-free

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