Infineon IPT Type N-Channel MOSFET, 122 A, 150 V Enhancement, 8-Pin HSOF-8
- RS stock no.:
- 249-3355
- Mfr. Part No.:
- IPT063N15N5ATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 reel of 2000 units)*
R 82 738,00
(exc. VAT)
R 95 148,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 06 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2000 - 2000 | R 41.369 | R 82,738.00 |
| 4000 - 4000 | R 40.335 | R 80,670.00 |
| 6000 + | R 39.125 | R 78,250.00 |
*price indicative
- RS stock no.:
- 249-3355
- Mfr. Part No.:
- IPT063N15N5ATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 122A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | HSOF-8 | |
| Series | IPT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 122A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type HSOF-8 | ||
Series IPT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon Optimos 5 power mosfet is N-Channel mosfet offers very low on-resistance and superior thermal resistance. This device is Pb (Lead) and halogen free. It comes in a surface mount, PG-HSOF-8 package.
Vds (drain to source voltage) is 150 V
Rds (max on) is 6.3 milliohm and Id is 122 A
Qdss and Qg values are 131 nC and 47 nC respectively
Related links
- Infineon N-Channel MOSFET 150 V, 8-Pin HSOF-8 IPT063N15N5ATMA1
- Infineon N-Channel MOSFET 150 V, 8-Pin HSOF-8 IPT054N15N5ATMA1
- Infineon N-Channel MOSFET 150 V, 8-Pin HSOF-8 IPT039N15N5ATMA1
- Infineon N-Channel MOSFET 150 V, 8-Pin HSOF-8 IPT044N15N5ATMA1
- Infineon N-Channel MOSFET 60 V, 8-Pin HSOF-8 IPT008N06NM5LFATMA1
- Infineon N-Channel MOSFET 600 V, 8-Pin HSOF-8 IPT60R055CFD7XTMA1
- Infineon N-Channel MOSFET 80 V, 8-Pin HSOF-8 IPT013N08NM5LFATMA1
- Infineon OptiMOS™ 5 Silicon N-Channel MOSFET 100 V, 8-Pin HSOF-8 IAUT150N10S5N035ATMA1