Infineon IPT Type N-Channel MOSFET, 143 A, 150 V Enhancement, 8-Pin HSOF-8

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Subtotal (1 reel of 2000 units)*

R 111 582,00

(exc. VAT)

R 128 320,00

(inc. VAT)

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Per Reel*
2000 - 2000R 55.791R 111,582.00
4000 - 4000R 54.396R 108,792.00
6000 +R 52.764R 105,528.00

*price indicative

RS stock no.:
249-3352
Mfr. Part No.:
IPT054N15N5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

143A

Maximum Drain Source Voltage Vds

150V

Package Type

HSOF-8

Series

IPT

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

81W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon Optimos 5 power mosfet is N-Channel mosfet offers very low on-resistance and superior thermal resistance. This device is Pb (Lead) and halogen free. It comes in a surface mount, PG-HSOF-8 package.

Vds (drain to source voltage) is 150 V

Rds (max on) is 5.4 milliohm and Id is 143 A

Qdss and Qg values are 155 nC and 55 nC respectively

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