Infineon IPT Type N-Channel MOSFET, 333 A, 80 V, 8-Pin HSOF-8 IPT013N08NM5LFATMA1

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Bulk discount available

Subtotal (1 reel of 2000 units)*

R 111 010,00

(exc. VAT)

R 127 662,00

(inc. VAT)

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Units
Per unit
Per Reel*
2000 - 2000R 55.505R 111,010.00
4000 - 4000R 54.117R 108,234.00
6000 +R 52.494R 104,988.00

*price indicative

RS stock no.:
236-1586
Mfr. Part No.:
IPT013N08NM5LFATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

333A

Maximum Drain Source Voltage Vds

80V

Package Type

HSOF-8

Series

IPT

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.3mΩ

Maximum Power Dissipation Pd

278W

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

158nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

2.4mm

Length

10.1mm

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS 5 Linear FET, 80 V MOSFET . This product is fully qualified according to JEDEC for industrial applications .

Ideal for hot-swap and e-fuse applications

Very low on-resistance RDS(on)

Wide safe operating area SOA

N-channel, normal level

100% avalanche tested

Pb-free plating, halogen-free

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