Infineon IPTG Type N-Channel MOSFET, 366 A, 100 V Enhancement, 8-Pin HSOG IPTG014N10NM5ATMA1

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Subtotal (1 pack of 2 units)*

R 190,57

(exc. VAT)

R 219,156

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 95.285R 190.57
10 - 98R 92.905R 185.81
100 - 248R 90.12R 180.24
250 - 498R 86.515R 173.03
500 +R 83.055R 166.11

*price indicative

Packaging Options:
RS stock no.:
233-4387
Mfr. Part No.:
IPTG014N10NM5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

366A

Maximum Drain Source Voltage Vds

100V

Series

IPTG

Package Type

HSOG

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.4mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

169nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

375W

Maximum Operating Temperature

175°C

Width

8.75 mm

Length

10.1mm

Standards/Approvals

No

Height

2.4mm

Automotive Standard

No

The Infineon OptiMOS power MOSFET IPTG014N10NM5 comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless, TOLG allows excellent electrical performance compared to D2PAK 7-pin with ∼60 percent board space reduction. This new package in OptiMOS 5 - 100 V offers very low RDS(on) and is optimized to handle high current 300 A. The flexibility of gullwing leads, OptiMOS in TOLG package shows excellent solder joint reliability on Al-IMS board.

High efficiency and lower EMI

High performance capability

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