Infineon IPTG Type N-Channel MOSFET, 108 A, 200 V Enhancement, 8-Pin HSOG

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Subtotal (1 reel of 1800 units)*

R 114 152,40

(exc. VAT)

R 131 275,80

(inc. VAT)

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Units
Per unit
Per Reel*
1800 - 1800R 63.418R 114,152.40
3600 - 3600R 61.832R 111,297.60
5400 +R 59.977R 107,958.60

*price indicative

RS stock no.:
233-4388
Mfr. Part No.:
IPTG111N20NM3FDATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

108A

Maximum Drain Source Voltage Vds

200V

Package Type

HSOG

Series

IPTG

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

11.1mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

375W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

63nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Length

10.1mm

Width

8.75 mm

Height

2.4mm

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS power MOSFET IPTG111N20NM3FD comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless, TOLG allows excellent electrical performance compared to D2PAK 7-pin with ∼60 percent board space reduction. This new package in OptiMOS 3 - 200 V offers very low RDS(on) and is optimized to handle high current 300 A. The flexibility of gullwing leads, OptiMOS in TOLG package shows excellent solder joint reliability on Al-IMS board.

High efficiency and lower EMI

High performance capability

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