Infineon IPTG Type N-Channel MOSFET, 366 A, 100 V Enhancement, 8-Pin HSOG

Image representative of range

View all MOSFETs
Bulk discount available

Subtotal (1 reel of 1800 units)*

R 73 548,00

(exc. VAT)

R 84 582,00

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 26 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
1800 - 1800R 40.86R 73,548.00
3600 - 3600R 39.839R 71,710.20
5400 +R 38.643R 69,557.40

*price indicative

RS stock no.:
233-4386
Mfr. Part No.:
IPTG014N10NM5ATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

366A

Maximum Drain Source Voltage Vds

100V

Series

IPTG

Package Type

HSOG

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.4mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

375W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

169nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

10.1mm

Height

2.4mm

Width

8.75 mm

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS power MOSFET IPTG014N10NM5 comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless, TOLG allows excellent electrical performance compared to D2PAK 7-pin with ∼60 percent board space reduction. This new package in OptiMOS 5 - 100 V offers very low RDS(on) and is optimized to handle high current 300 A. The flexibility of gullwing leads, OptiMOS in TOLG package shows excellent solder joint reliability on Al-IMS board.

High efficiency and lower EMI

High performance capability

Related links