Infineon IPTG Type N-Channel MOSFET, 408 A, 80 V Enhancement, 8-Pin HSOG

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Subtotal (1 reel of 1800 units)*

R 141 721,20

(exc. VAT)

R 162 979,20

(inc. VAT)

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Units
Per unit
Per Reel*
1800 - 1800R 78.734R 141,721.20
3600 - 3600R 76.766R 138,178.80
5400 +R 74.463R 134,033.40

*price indicative

RS stock no.:
233-4384
Mfr. Part No.:
IPTG011N08NM5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

408A

Maximum Drain Source Voltage Vds

80V

Package Type

HSOG

Series

IPTG

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.1mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

178nC

Maximum Power Dissipation Pd

375W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

8.75 mm

Height

2.4mm

Length

10.1mm

Automotive Standard

No

The Infineon OptiMOS power MOSFET IPTG011N08NM5 comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless, TOLG allows excellent electrical performance compared to D2PAK 7-pin with ∼60 percent board space reduction. This new package in OptiMOS 5 - 80 V offers very low RDS(on) and is optimized to handle high current 300 A. The flexibility of gullwing leads, OptiMOS in TOLG package shows excellent solder joint reliability on Al-IMS board. This result in 2x higher thermal cycling on board

High efficiency and lower EMI

High performance capability

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