Infineon IPTG Type N-Channel MOSFET, 454 A, 60 V Enhancement, 8-Pin HSOG IPTG007N06NM5ATMA1

Image representative of range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 2 units)*

R 100,78

(exc. VAT)

R 115,90

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 28 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
2 - 8R 50.39R 100.78
10 - 98R 49.13R 98.26
100 - 248R 47.655R 95.31
250 - 498R 45.75R 91.50
500 +R 43.92R 87.84

*price indicative

Packaging Options:
RS stock no.:
233-4382
Mfr. Part No.:
IPTG007N06NM5ATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

454A

Maximum Drain Source Voltage Vds

60V

Package Type

HSOG

Series

IPTG

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.75mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

375W

Typical Gate Charge Qg @ Vgs

216nC

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

8.75 mm

Height

2.4mm

Length

10.1mm

Automotive Standard

No

The Infineon OptiMOS power MOSFET IPTG007N06NM5 comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless, TOLG allows excellent electrical performance compared to D2PAK 7-pin with ∼60 percent board space reduction. This new package in OptiMOS 5 - 60 V offers very low RDS(on) and is optimized to handle high current 300 A. The flexibility of gullwing leads, OptiMOS in TOLG package shows excellent solder joint reliability on Al-IMS board. This result in 2x higher thermal cycling on board

High efficiency and lower EMI

High performance capability

Related links